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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
1.1
2.0
1.0
1.5
1.0
0.9
T J , Junction Temperature [ C ]
T J , Junction Temperature [ C ]
0.8
-100
*Notes:
1. V GS = 0V
2. I D = 250 μ A
-50 0 50 100 150 200
o
0.5
0.0
-100
*Notes:
1. V GS = 10V
2. I D = 75A
-50 0 50 100 150 200
o
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
1000
100
1ms
10ms
100 μ s
10 μ s
200
150
1. T C = 25 C
10
1
Operation in This Area
is Limited by R DS(on)
*Notes:
o
100ms
DC
100
50
Limited by package
2. T J = 175 C
o
3. Single Pulse
T C , Case Temperature [ C]
0.1
0.1
1 10
V DS , Drain-Source Voltage [V]
100 200
0
25
50
75 100 125 o
150
175
Figure 11. Transient Thermal Response Curve
1
0.5
0.1
0.2
0.1
P DM
0.01
0.05
0.02
0.01
*Notes:
t 1
t 2
1. Z θ JC (t) = 0.4 C/W Max.
Single pulse
o
2. Duty Factor, D= t 1 /t 2
10
10
10
10
10
10
10
1E-3
-5
-4
-3
-2
3. T JM - T C = P DM * Z θ JC (t)
-1 0
1
t 1 , Rectangular Pulse Duration [sec]
Rectangular Pulse Duration [sec]
?2008 Fairchild Semiconductor Corporation
FDB047N10 Rev. C2
4
www.fairchildsemi.com
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